ss2406 hall latch - high sensitivity 1 v 3.1 0 nov 1 , 20 1 3 packages features and benefits 3 pin sot23 (suffix so) 3 pin sip (suffix ua) ? wid e operating voltage range from 2 .5v to 24v ? high magnetic sensitivity ? multi- purpose ? d mos technology ? low current consumption ? chopper - stabilized amplifier stage ? open drain output ? superior temperature stability ? insensitive to physical stress ? sot23 3l and flat sip 3l both rohs c ompliant packages functional block diagram application examples ? automotive, consumer and industrial ? solid - state switch ? brushless dc motor commutation ? speed detection ? angular position detection ? linear position detection ? proximity detection general description the ss2406 is a hall - effect sensor ic fabricated from mixed signal d mos technology. the device int e- grates a voltage regulator, hall sensor with dynamic offset cancellation system, schmitt trigger and an open - drain output driver, all in a single package. it incorporates advanced chopper stabilization techniques to provide accurate and stable magnetic switch points. there are many applications for this hed - hall electronic device - in addition to those listed above. the design, specifications and performan ce have been optimized for commutation applications in 5v and 12v brushless dc motors . thanks to its wide operating voltage range and extended choice of temperature range, it is quite suitable for use in automotive, industrial and consumer applications. th e device is delivered in a small outline transistor (sot) for surface mount process or in a plastic single in line ( to92 ) for through - hole mount. both 3 - lead packages are rohs compliant. v dd out voltage regulat o r chopper hall plate gnd sip package so t package pin 1 ? v dd pin 1 ? v dd pin 2 ? gnd pin 2 ? out pin 3 ? out pin 3 ? gnd
ss2406 hall latch - high sensitivity 2 v 3.1 0 nov 1 , 20 1 3 glossary of terms millitesla (mt), gauss units of magnetic flux density: 1mt = 10 gauss rohs restriction of hazardous substances sot small outline transistor (sot package) ? also referred with the package code ?so? esd electro - static discharge bldc brush - less direct - current operat ing point (b op ) magnetic flux density applied on the branded side of the package which turns the output driver on (v out = v dson ) release point (b rp ) magnetic flux density applied on the branded side of the package which turns the output driver off (v out = high) unique features based on mixed signal d mos technology, the ss2406 is a hall - effect device with high magnetic sensitivity. this multi - purpose latch meets most of the application requirements. the chopper - stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with ha ll sensors and amplifiers. the d mos technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. the small chip size is also an i m- portant factor to minimize the effect of physical stress. this combination results in more stable magnetic chara c- teristics and enables faster and more precise design. the wide operating voltage from 3 .5v to 24v, low current consumption and la rge choice of operating t emper a- ture range according to ? e ?, ? k ? and ? l ? specification make this device suitable for automotive, industrial and consumer applications. pin definitions and descriptions sot pin sip pin name type function 1 1 v dd supply supply voltage p in 2 3 out output open drain output p in 3 2 gnd ground ground p in
ss2406 hall latch - high sensitivity 3 v 3.1 0 nov 1 , 20 1 3 absolute maximum ratings parameter symbol value units supply voltage v dd 28 v supply current i dd 50 ma output voltage v out 28 v output current i out 50 ma storage temperature range t s - 65 to 1 50 c maximum junction temperature t j 165 c operating temperature range symbol value units temperature suffix ?e? t a - 40 to 85 c temperature suffix ? k ? t a - 40 to 1 25 c temperature suffix ?l? t a - 40 to 150 c exceeding the absolute maximum ratings may cause permanent damage. exposure to absolute - maximum - rated conditions for exten d- ed periods may affect device reliability. general electrical specifications dc operating parameters t a = 25 c , v dd = 2 .5v to 24v (unless otherwise specified) parameter symbol test conditions min typ max units supply voltage v dd operating 2 .5 24 v supply current i dd b < b rp 5 ma output saturation voltage v dson i out = 20ma, b > b op 0. 4 v output leakage current i off b < b rp v out = 24v 1 10 a output rise time t r r l = 1k ?, c l = 20pf 0.04 0.45 s output fall time t f r l = 1k ?, c l = 20pf 0.18 0.45 s maximum switching frequency f sw --- 10 khz electro - static discharge hbm --- 4 k v package thermal resistance r th single layer (1s) jedec board 301 c /w note : the output of ss2406 will be switched after the supply voltage is over 2.2v, but the magnetic characteristics w ill not be normal until the supply is over 2 .5v. magnetic specifications dc operating parameters t a = 25c, v dd = 12 v (unless otherwise specified) pa ckage parameter symbol test conditions min typ max units ua operating point b op ta=25c v dd = 5 v dc 5 15 25 g release point b rp - 25 - 15 - 5 g hysteresis b hyst 30 g so operating point b op ta=25c v dd = 5 v dc - 25 - 15 - 5 g release point b rp 5 15 25 g hysteresis b hyst 30 g
ss2406 hall latch - high sensitivity 4 v 3.1 0 nov 1 , 20 1 3 output behavior versus magnetic pole dc operating parameters t a = - 40c to 150 c , v dd = 2. 5 to 24 v (unless otherwise specified) test conditions (ua) test conditions (so) out b < b rp b > b rp high b > b op b < b op low the sot - 23 device is reversed from the ua pack age. the sot - 23 output transistor will be turned on (drops low) in the presence of a sufficiently strong north pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently strong south pole magnetic field . detailed general description the ss2406 exhibits latch magnetic switching characteristics. therefore, it requires both south and north poles to operate properly. the out pin of these devices switches low (turns on) when a magnetic field perpendicular to the hall sensor e x- ceeds the operate point threshold, b op . after turn - on, the output voltage is v dson . note that the device latches, that is, a south pole of sufficient strength towards the branded surface of the device turns the device on. the device remains on if the south pole is removed (b 0). this latching property defines the device as a magnetic memory. when the magnetic field is reduced below the release point, b rp , the out pin turns off (goes high). the difference in the magnetic operat ing and release points is the hysteresis, b hys t , of th e device. this built - in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. the device behaves as a latch with symmetric operating and release switching points (b op =|b rp |). this means ma g- 0mt 0mt output level output level out = high flux density out = high b op 15 gs typ out = low out = low u a pac k ag e - lat c h c harac t er i s t i c b op 15 gs typ b r p - 15 gs typ b r p - 15 gs typ flux density se pac k ag e - lat c h c hara ct er i s t ic b hys b hys
ss2406 hall latch - high sensitivity 5 v 3.1 0 nov 1 , 20 1 3 netic fields with equivalent strength and opposite direction drive the output high and low. powering - on the device in the hysteresis region (less than b op and higher than b rp ) allows an indeterminate output state. the correct state is attained after the first excursion beyond b op or b rp . the sot - 23 device is reversed from the ua pack age. the sot - 23 output transistor will be latched on in the pre s- ence of a sufficiently strong north pole magnetic field applied to the marked face . application information it is strongly recommended that an external bypass capacitor be connected (in close proximity to the hall sensor) b e- tween the supply (v dd pin) and ground (gnd pin) of the device to reduce both external noise and noise generated by the chopper stabilization technique. as is shown in the following two figures in next page, a 0.1f capacitor is typic al. for reverse voltage protection, it is recommended to connect a resistor or a diode in series with the vdd pin. when using a resistor, three points are important: - the resistor has to limit the reverse current to 50ma maximum (v cc / r1 50ma) - the resulting device supply voltage v dd has to be higher than v dd min (v dd = v cc ? r1*i dd ) - the resistor has to withstand the power dissipated in reverse voltage condition (p d = v cc 2 /r1) when using a diode, a reverse current cannot flow and the voltage drop is almost constant ( 0.7v). therefore, a 100 ?/0.25w resistor for 5v application and a diode for higher supply voltage are recommended. both solutions provide the required reverse voltage protection. when a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended t he following figure is used. the low - pass filt er formed by r1 a nd c1 and the z ener diode z1 bypass the disturbances or voltage spikes occurring on the device supply voltage v dd . the diode d1 provides additional reverse voltage protection. typical three - wire application circuit ss2406 r2 c2 v dd gnd out c1 automotive and severe environment protection circuit ss2406 r1:100 r2 c2 v dd gnd out c1 z1 d1
ss2406 hall latch - high sensitivity 6 v 3.1 0 nov 1 , 20 1 3 the ss2406 have been optimized for commutation applications in 5v and 12v brushless dc motors. the follow ing figure in the next page is the typical application circuit for 3 phase brushless dc motors. esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling semiconductor products.
ss2406 hall latch - high sensitivity 7 v 3.1 0 nov 1 , 20 1 3 package information package u a , 3 - pin sip: 4.0 0.01 1 2 3 1.27 2.13 1.87 1.00 1.20 45 1 1.52 0.1 3 1 0.75 0.05 3.0 0.01 0.44 0.01 0.05 0.0 1 1.6. 0.1 0.84(nom) 3 1 6 1 6 1 3 1 14 .5 1 active area depth: sensor location 1 2 3 notes: 1). controlling dimension : mm ; 2). le a ds must be free of flash and plating voids ; 3). do not bend leads within 1 mm of lead to package interface ; 4). pinout: pin 1 v dd pin 2 gnd pin 3 output 0.39 0.01 0.38 0.01 2.54
ss2406 hall latch - high sensitivity 8 v 3.1 0 nov 1 , 20 1 3 package so , 3- pin sot - 23: sot - 23 package hall location : ordering information part no. pb - free temperature code package code packing ss2406 e sot yes - 40c to 85c sot - 23 7- in. reel, 3000 pieces/reel ss2406 e ua yes - 40c to 85c to - 92 bulk, 1000 pieces/bag ss2406 k sot yes - 40c to 1 25 c sot - 23 7- in. reel, 3000 pieces/reel ss2406 k ua yes - 40c to 1 25 c to - 92 bulk, 1000 pieces/bag ss2406 l sot yes - 40c to 150c sot - 23 7- in. reel, 3000 pieces/reel ss2406 l ua yes - 40c to 150c to - 92 bulk, 1000 pieces/bag 0.56 0.66 0.95 1.50 chip 3 2 1 bottom view of sot - 23 package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 m in 2.60 3.00 1.50 1.8 0 1.70 2.10 3 2 1 top side vie end notes 1). pinout: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters;
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